半導体装置およびその製造方法

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method thereof wherein its withstanding voltage can be improved while reducing its stationary loss. <P>SOLUTION: A rectifying element has a substrate 1, an impurity-region layer (comprising n-layers 3 and p-layers 5) made of semiconductors, and an anode electrode 9. The impurity-region layer is formed on the substrate 1, and has a first surface present on the side of the substrate 1, and has a second surface present on the opposite side to the substrate 1. The anode electrode 9 is formed on the n-layers 3 and the p-layers 5. In the impurity-region layer, there are formed the n-type n-layers 3 to the first surface from the second surface, and the p-type p-layers 5 each of which is adjacent to each n-layer 3 and is extended from the second surface to the first surface, and which are so disposed as to sandwich each n-layer 3 between them. The anode electrode 9 is subjected to Schottky-contacts with the n-layers 3, and is connected electrically with the p-layers 5. <P>COPYRIGHT: (C)2007,JPO&amp;INPIT

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